Protection Circuit for12V DC input

Hi,

I have doubt regarding 12V DC input.
I have followed “Jetson AGX Orin Series Modules Design Guide “
For my design, I require only 12V supply from DC Jack and I have considered section 5.2 SYS_VIN_HV Input.
I have following Doubts:

  1. What is the purpose of the Diode DDZ22BSF-7 ? because, In case of reverse polarity, it will blow.

  2. Voltage divider circuit will keep the P M-MOSFET “FDMS6681Z” in off condition when 12V supply is there and the MOSFET will not conduct.

  3. In case of Reverse polarity, the body diode of P MOSFET will conduct and will not protect from Reverse polarity.

Please check this and suggest the suitable correct circuit.

*** Please note that this reply is generated by LLM automatically ***

I’d be happy to help clarify your doubts regarding the 12V DC input circuit for the Jetson AGX Orin module.

Purpose of Diode DDZ22BSF7:
The Diode DDZ22BSF7 is a Schottky diode, which is used for reverse polarity protection. Its purpose is to prevent damage to the module in case of accidental reverse connection of the 12V DC input. When the input voltage is applied correctly (i.e., positive voltage on the VIN pin), the diode is reverse-biased and does not conduct. However, if the input voltage is applied in reverse (i.e., negative voltage on the VIN pin), the diode becomes forward-biased and conducts, allowing the current to flow through it. This helps to protect the module from damage due to reverse polarity.

Voltage Divider Circuit:
The voltage divider circuit, consisting of resistors R1 and R2, is used to reduce the 12V input voltage to a lower voltage that is suitable for the P-MOSFET (FDMS6681Z) gate drive. The voltage divider circuit helps to ensure that the MOSFET is turned off when the 12V supply is present and the input voltage is within the specified range.

P-MOSFET (FDMS6681Z) Body Diode:
You are correct that the body diode of the P-MOSFET (FDMS6681Z) will conduct in case of reverse polarity, which could potentially damage the module. However, the Diode DDZ22BSF7 is designed to protect against this scenario by providing an alternative path for the current to flow in case of reverse polarity.

Correct Circuit:
Based on the Jetson AGX Orin Series Modules Design Guide, the circuit you have described appears to be correct. The Diode DDZ22BSF7 provides reverse polarity protection, and the voltage divider circuit helps to ensure that the P-MOSFET is turned off when the 12V supply is present. However, I would like to suggest a few additional considerations:

  1. Add a fuse: Consider adding a fuse (e.g., F1) in series with the 12V input to provide additional protection against overcurrent conditions.
  2. Use a TVS diode: Consider adding a Transient Voltage Suppressor (TVS) diode (e.g., D1) in parallel with the Diode DDZ22BSF7 to provide additional protection against voltage transients and spikes.
  3. Verify the MOSFET selection: Ensure that the P-MOSFET (FDMS6681Z) is suitable for your specific application and that its characteristics (e.g., Vgs, Id, and Rds(on)) meet your requirements.

Here is an updated circuit diagram incorporating these suggestions:

          +-----------+
          |          |
          |  12V DC  |
          |  Input   |
          +-----------+
                  |
                  |
                  v
+---------------+       +---------------+
|               |       |               |
|  Fuse (F1)    |       |  Diode (DDZ22BSF7) |
|               |       |               |
+---------------+       +---------------+
                  |
                  |
                  v
+---------------+       +---------------+
|               |       |               |
|  TVS Diode (D1) |       |  Voltage Divider  |
|               |       |  (R1, R2)       |
+---------------+       +---------------+
                  |
                  |
                  v
+---------------+
|               |
|  P-MOSFET    |
|  (FDMS6681Z)  |
|               |
+---------------+
                  |
                  |
                  v
+---------------+
|               |
|  Module Power  |
|               |
+---------------+

Please note that this is just a suggested circuit, and you should verify that it meets your specific requirements and is compatible with your module and application.

*** Please give the thumbs up if you get answers you like. Or provide feedback to help us improve the answer. ***

Hi,

Sorry, I am not satisfied with the answers.

The DDZ22BSF7 diode has forward bias current only 200mA. In case of reverse polarity, more current will flow and that can blow this diode.

Ideally, the P MOSFET should conduct only in case correct 12V DC input is there. if only body diode is conducting, the MOSFET may get damage. I am having doubt; is this arrangement is for N-Channel MOSFET?
Please check it thoroughly.

Thanks,
Swadesh

Hi,

I am looking for help on this. Please guide me ASAP.

For further guidance, please check the Jetson AGX Orin Developer Kit Carrier Board Design Files (A05) Log in | NVIDIA Developer

You could follow the carrier board design or you could do circuit simulation and modify the circuits, test/validate them to meet your requirements.

This topic was automatically closed 14 days after the last reply. New replies are no longer allowed.